High-power terahertz pulse generation from bias-free nanoantennas on graded composition InGaAs structures
High-power terahertz pulse generation from bias-free nanoantennas on graded composition InGaAs structures
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DOI：
10.1364/oe.447733
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发表时间：
2022-01-17
期刊：
影响因子：
3.8
通讯作者：
Jarrahi, Mona
中科院分区：
文献类型：
--
作者：
Lu, Ping Keng;Turan, Deniz;Jarrahi, Mona
我们提出了一种无偏压光电导发射器，它在具有线性渐变铟成分的 InGaAs 层上使用纳米天线阵列。分级 InGaAs 结构创建了一个延伸穿过整个光电导有源区域的内置电场，使光生电子能够有效漂移到纳米天线。选择纳米天线的几何形状，以便响应 1550 nm 光泵激发表面等离子体波，以最大化纳米天线附近的光生载流子浓度，其中内置电场强度最大化。通过等离子体增强和内置电场的结合，无需使用任何外部偏置电压即可产生高功率太赫兹脉冲。我们展示了在平均光泵功率为 900 mW 的情况下生成平均功率为 860 μW 的太赫兹脉冲，与之前演示的电信兼容太赫兹脉冲发射器相比，表现出最高的辐射功率。 (C) 2022 Optica Publishing Group 根据 Optica 开放获取出版协议的条款
We present a bias-free photoconductive emitter that uses an array of nanoantennas on an InGaAs layer with a linearly graded Indium composition. The graded InGaAs structure creates a built-in electric field that extends through the entire photoconductive active region, enabling the efficient drift of the photo-generated electrons to the nanoantennas. The nanoantenna geometry is chosen so that surface plasmon waves are excited in response to a 1550 nm optical pump to maximize photo-generated carrier concentration near the nanoantennas, where the built-in electric field strength is maximized. With the combination of the plasmonic enhancement and built-in electric field, high-power terahertz pulses are generated without using any external bias voltage. We demonstrate the generation of terahertz pulses with 860 mu W average power at an average optical pump power of 900 mW, exhibiting the highest radiation power compared to previously demonstrated telecommunication-compatible terahertz pulse emitters. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement