High resolution vacuum scanning thermal microscopy of HfO2 and SiO2
High resolution vacuum scanning thermal microscopy of HfO2 and SiO2
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DOI：
10.1063/1.2840186
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发表时间：
2008-01-28
影响因子：
4
通讯作者：
Duerig, U.
中科院分区：
文献类型：
--
作者：
Hinz, M.;Marti, O.;Duerig, U.
我们提出了扫描热显微镜（SThM）测量的样品组成的区域的3 nm厚的HfO2膜和2 nm厚的SiO2在硅衬底上。实验是在高真空条件下进行的，使用具有尖锐的可加热尖端的微制造硅杠杆，促进了25 nm的横向SThM图像分辨率的前所未有的成就。此外，通过尖端的样品的热传递进行了研究，使用的方法曲线，并用于确定3 nm厚的HfO2层的热导率。(C)2008年美国物理学会。
We present scanning thermal microscopy (SThM) measurements on a sample consisting of regions of 3 nm thick HfO2 film and 2 nm thick SiO2 on a silicon substrate. The experiments were preformed in high vacuum conditions using microfabricated silicon cantilevers with sharp heatable tips, facilitating the unprecedented achievement of a lateral SThM image resolution of 25 nm. In addition, the heat transfer through the tip to the sample was investigated using approach curves and used to determine the thermal conductivity of the 3 nm thick HfO2 layer. (C) 2008 American Institute of Physics.