GaAs-based distributed feedback laser at 780 nm for 87Rb cold atom quantum technology

GaAs-based distributed feedback laser at 780 nm for 87Rb cold atom quantum technology
复制标题

用于 87Rb 冷原子量子技术的 780 nm GaAs 分布式反馈激光器

DOI:
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发表时间:
2017
期刊:
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
影响因子:
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通讯作者:
D. Paul
D. Paul
中科院分区:
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文献类型:
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作者:
Ying Ding;G. Ternent;Anwer Saeed;C. Hamilton;N. Hempler;G. Malcolm;G. Maker;M. Sorel;D. Paul

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英国传感器和计量量子技术中心 [1] 的目标是为一系列传感器和计时应用(包括旋转、磁性、重力和原子钟)开发集成、小型和实用的冷原子系统。该方法类似于芯片级原子钟 [2] 所开创的方法,其中微型制造的真空室中的原子具有由二极管激光器 [3] 和光电探测器激发和探测的原子跃迁。该系统使用相干布居捕获来实现时钟跃迁,而我们的目标是首先生产用于冷却和捕获真空室内离子的激光器,然后再使用微波脉冲或受控激光创建叠加态、重新组合它们并测量来自最终态布居的干扰。为了冷却 87Rb 原子,需要线宽低于 ∼5 MHz 的 780.24 nm 激光器,而用于控制和测量叠加态的激光器(通常是外腔激光器)已用于实现从 20 kHz [3] 到几 Hz [4] 的线宽。大多数用于激光冷却的单模二极管激光器都使用具有再生功能的 DBR 光栅 [5],但由于氧化而使用 AlGaAs 材料时,这具有挑战性。
The UK Quantum Technology Hub in Sensors and Metrology [1] has the aim of developing integrated, small and practical cold atom systems for a range of sensor and timing applications which includes rotation, magnetism, gravity and atomic clocks. The approach is similar to that pioneered by the chip scale atomic clock [2] where atoms held in microfabricated vacuum chambers have atomic transitions excited and probed by diodes lasers [3] and photodetectors. That system used coherent population trapping for the clock transitions whilst we are aiming to first produce lasers for cooling and trapping ions inside vacuum chambers before microwave pulses or controlled lasers are used to create superposition states, recombine them and measure the interference from the final state populations. For cooling 87Rb atoms, 780.24 nm lasers with linewidths below ∼5 MHz are required whilst the lasers for controlling and measuring superposition states typically external cavity lasers have been used to achieve linewidths from 20 kHz [3] down to a few Hz [4]. Most single mode diode lasers aimed at laser cooling have used DBR gratings with regrowth [5] but this is challenging when using AlGaAs materials due to oxidation.