A Lateral MOS-Capacitor-Enabled ITO Mach-Zehnder Modulator for Beam Steering
A Lateral MOS-Capacitor-Enabled ITO Mach-Zehnder Modulator for Beam Steering
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DOI：
10.1109/jlt.2019.2956719
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发表时间：
2020-01-15
影响因子：
4.7
通讯作者：
Sorger, Volker J.
中科院分区：
文献类型：
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作者：
Amin, Rubab;Maiti, Rishi;Sorger, Volker J.
在这里，我们实验证明了铟锡氧化物（ITO）马赫-曾德尔干涉仪异质集成在硅光子学。移相器部分是在一种新的横向MOS结构中实现的，由于良好的静电重叠，可以实现高效的调制（V Pi;L = 63 V-）。μm)。这是通过(i)选择强折射率改变材料（ITO）和（ii）改善电场重叠来实现的，正如静电场线所证实的那样。此外，我们表明，该平台可以作为端射硅光子光学相控阵（OPA）的构建模块，在波导内具有半波长间距，具有预期的性能，包括窄主波束瓣（< 3度）和bbb10 dB侧瓣抑制，同时静电控制发射轮廓高达+/- 80度，如果进一步设计，不仅可以在激光雷达系统中实现纳秒级快速光束转向能力，还可以在全息显示、自由空间光通信和光开关中实现。
Here, we experimentally demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics. The phase shifter section is realized in a novel lateral MOS configuration, which, due to favorable electrostatic overlap, leads to efficient modulation (V Pi;L = 63 V-.mu m). This is achieved by (i) selecting a strong index changing material (ITO) and (ii) improving the field-overlap as verified by the electrostatic field lines. Furthermore, we show that this platform serves as a building block in an end-fire silicon photonics optical phased array (OPA) with a half-wavelength pitch within the waveguides with anticipated performance, including narrow main beam lobe (< 3 degrees) and > 10 dB suppression of the side lobes, while electrostatically steering the emission profile up to +/- 80 degrees, and if further engineered, can lead not only towards nanosecond-fast beam steering capabilities in LiDAR systems but also in holographic display, free-space optical communications, and optical switches.