Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise
Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise
复制标题
以带有分数噪声的广义朗之万方程为特征的半导体中的电荷粒子输运
DOI：
10.1016/j.physa.2019.122339
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Luo Maokang
中科院分区：
文献类型：
--
作者：
He Guitian;Tian Yan;Luo Maokang
本文从半导体中的本征噪声出发，提出了由分数阶本征高斯噪声驱动的广义朗之万方程（GLE）描述的一维半导体中电荷粒子输运模型。导出了带电粒子的平均速度、微分迁移率、电导率、速度涨落的二次相关函数和总电流密度涨落的功率谱的解析表达式。此外，还介绍了受广义线性方程支配的带电粒子在电场和磁场中的运动模型。得到了带电粒子速度的均值和方差的表达式、带电粒子运动的Fokker-Planck方程、弛豫函数的渐近性质。在霍尔效应下，对薄膜的霍尔角、霍尔系数以及电阻率进行了研究。
From the view of intrinsic noise in semiconductors, the model of charge-particles transport in one-dimensional semiconductors described by a generalized Langevin equation (GLE) driven by a intrinsic fractional Gaussian noise is proposed in this paper. The analytical expression of the average charged particle velocity, the differential mobility, the conductivity of charge-particles, the two-time correlation function of the velocity fluctuation and the power spectral of total current density fluctuation have been derived. Furthermore, the model of motion for the charge-particle subjected to an electric field and a magnetic field governed by GLE is introduced. The expressions of mean values and variances of charged particle velocity, Fokker–Planck equation of charge-particle motion, the asymptotic behaviors of the relaxation functions have been obtained. Under the Hall effect, the Hall angle, the Hall coefficient, as well as the electrical resistivity also have been studied.