Electron induced inelastic and ionization cross section for plasma modeling
Electron induced inelastic and ionization cross section for plasma modeling
复制标题
用于等离子体建模的电子诱导非弹性和电离截面
DOI：
10.1063/1.4961088
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
B. Antony
中科院分区：
文献类型：
--
作者：
P. Verma;Dibyendu Mahato;Jaspreet Kaur;B. Antony
本文报道了电子碰撞总非弹性和电离截面的硅，锗，锡四卤化物在不同的能量从电离阈值的目标，5000 eV。这些横截面数据在一个广泛的能源领域是非常必要的，以了解物理化学过程中涉及的各种环境，如等离子体建模，半导体蚀刻，大气科学，生物科学和辐射物理。然而，关于上述分子的截面数据是稀缺的。本文报道了用球复光学势方法计算总非弹性截面和用半经验方法估算电离截面。本电离截面结果SiCl4与以前的测量结果显示出良好的协议，而其他分子尚未进行实验研究。目前的研究结果表明更一致的行为比以前的理论估计…
The present paper reports electron impact total inelastic and ionization cross section for silicon, germanium, and tin tetrahalides at energies varying from ionization threshold of the target to 5000 eV. These cross section data over a wide energy domain are very essential to understand the physico-chemical processes involved in various environments such as plasma modeling, semiconductor etching, atmospheric sciences, biological sciences, and radiation physics. However, the cross section data on the above mentioned molecules are scarce. In the present article, we report the computation of total inelastic cross section using spherical complex optical potential formalism and the estimation of ionization cross section through a semi-empirical method. The present ionization cross section result obtained for SiCl4 shows excellent agreement with previous measurements, while other molecules have not yet been investigated experimentally. Present results show more consistent behaviour than previous theoretical est...