Direct Vapor-Liquid-Solid Synthesis of All-Inorganic Perovskite Nanowires for High-Performance Electronics and Optoelectronics
Direct Vapor-Liquid-Solid Synthesis of All-Inorganic Perovskite Nanowires for High-Performance Electronics and Optoelectronics
复制标题
用于高性能电子和光电子学的全无机钙钛矿纳米线的直接气-液-固合成
DOI：
10.1021/acsnano.9b02379
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发表时间：
2019-05-01
期刊：
影响因子：
17.1
通讯作者：
Ho, Johnny C.
中科院分区：
文献类型：
--
作者：
Meng, You;Lan, Changyong;Ho, Johnny C.
卤化铅钙钛矿（LHP）纳米结构的可控合成不仅有利于基础研究，而且具有应用前景。在众多的合成技术中，虽然催化气-液-固（VLS）生长被认为是获得高质量纳米结构的有效途径，但由于钙钛矿合成中出现的挑战，到目前为止，还没有关于VLS生长的LHP纳米材料的详细报道。在这里，我们开发了用于单晶全无机卤化铅钙钛矿的直接VLS生长（即，CsPbX 3; X = Cl、Br或I）纳米线（NW）。这些纳米线表现出高性能的光电探测，响应率超过4489 A/W，对可见光区的探测率超过7.9 × 10（12）琼斯。基于单个CsPbX 3纳米线的场效应晶体管（FET）也被制造，其中它们显示出高达3.05 cm（2）/（Vs）的上级空穴迁移率，高于其它全无机LHP器件。这项工作为进一步改进这些钙钛矿纳米结构的应用提供了重要的指导。
Controlled synthesis of lead halide perovskite (LHP) nanostructures not only benefits fundamental research but also offers promise for applications. Among many synthesis techniques, although catalytic vapor-liquid-solid (VLS) growth is recognized as an effective route to achieve high-quality nanostructures, until now, there is no detailed report on VLS grown LHP nanomaterials due to the emerging challenges in perovskite synthesis. Here, we develop a direct VLS growth for single-crystalline all-inorganic lead halide perovskite (i.e., CsPbX3; X = Cl, Br, or I) nanowires (NWs). These NWs exhibit high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 x 10(12) Jones toward the visible light regime. Field-effect transistors (FET) based on individual CsPbX3 NWs are also fabricated, where they show the superior hole mobility of up to 3.05 cm(2)/(V s), higher than other all-inorganic LHP devices. This work provides important guidelines for the further improvement of these perovskite nanostructures for utilizations.