Grain‐Boundary Defect Chemistry of Acceptor‐Doped Titanates: Inversion Layer and Low‐Field Conduction
Grain‐Boundary Defect Chemistry of Acceptor‐Doped Titanates: Inversion Layer and Low‐Field Conduction
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DOI：
10.1111/j.1151-2916.1997.tb03121.x
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发表时间：
2005-01
影响因子：
3.9
通讯作者：
M. Vollmann;R. Hagenbeck;R. Waser
中科院分区：
文献类型：
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作者：
M. Vollmann;R. Hagenbeck;R. Waser
用时域导纳分析法研究了受主掺杂SrTiO_3陶瓷晶界空间电荷耗尽层的电子和离子导电特性。的受主浓度，平衡过程中的氧分压，和GB电导率的温度依赖性的依赖关系进行了讨论和解释的GB区域的缺陷化学模型，使用数值模拟技术。
The electronic and ionic conduction across grain-boundary (GB) space-charge depletion layers in acceptor-doped SrTiO3 ceramics have been investigated by admittance analysis in the time domain. The dependence on the acceptor concentration, the oxygen partial pressure during equilibration, and the temperature dependence of the GB conductivity are discussed and interpreted in terms of a defect-chemistry model of the GB region using a numerical simulation technique.