Study of one-step electrodeposition condition for preparation of CuIn(Se,S)2 thin films
Study of one-step electrodeposition condition for preparation of CuIn(Se,S)2 thin films
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DOI：
10.1016/s0927-0248(97)00986-0
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发表时间：
1998-01-01
影响因子：
6.9
通讯作者：
Nakazawa, T
中科院分区：
文献类型：
--
作者：
Kuranouchi, S;Nakazawa, T
研究了一步电沉积法制备四元CuIn（Se，S）（2）薄膜的工艺参数。发现在制备溶液数小时后滤出源溶液中的沉淀物有利于获得给定组成的四元膜。薄膜的铜铟比根据所施加的电势而急剧变化。通过降低源溶液中的硒浓度，可以在较宽的范围内控制膜的组成或施加的电位。
Some condition parameters for the one-step electrodeposition to prepare the quaternary CuIn(Se, S)(2) thin films were studied. It was found that filtering out the precipitation in the source solution after several hours from the preparation of the solution was good to obtain a given composition quaternary films. The copper to indium ratio of the films changed drastically depending on the applied potential. It became easy to control the film composition in a relatively wide range or the applied potential oy decreasing selenium concentration in the source solution.