A Compact Physics-Based Surface Potential and Drain Current Model for an S/D Spacer-Based DG-RFET
A Compact Physics-Based Surface Potential and Drain Current Model for an S/D Spacer-Based DG-RFET
复制标题
DOI：
10.1109/ted.2017.2786302
复制
发表时间：
2018-01
影响因子：
3.1
通讯作者：
A. Bhattacharjee;S. Dasgupta
中科院分区：
文献类型：
--
作者：
A. Bhattacharjee;S. Dasgupta
在本文中，我们已经开发了一个基于物理的紧凑模型的表面电位和漏电流的双栅源/漏（S/D）间隔基硅纳米线可重构场效应晶体管（RFET）。该模型是通过将器件的有源区划分为几个部分的基础上定位的栅极，间隔，和金属硅化物肖特基结。首先推导了电荷密度表达式，并应用电流连续性原理求出了电子和空穴输运的准费米势。使用这些和进一步求解2-D泊松方程自洽的设备的各个子区域，漏电流和表面电位建模随后。该模型包括漏极电压、纳米线半径、温度和肖特基势垒高度的影响。使用3-D数值技术计算机辅助设计模拟的准确性进行了测试。所提出的模型可以用于研究具有S/D间隔物的双极FET的行为，以改变器件尺寸，也可以用于未来的存储器器件和电路的设计，使用基于间隔物的RFETS。
In this paper, we have developed a physics-based compact model for surface potential and drain current for a dual gate source/drain (S/D) spacer-based silicon nanowire reconfigurable field-effect transistor (RFET). The models are derived by dividing the active region of the device into several portions based on positioning of the gates, spacers, and the metal-silicide Schottky junctions. A charge density expression is first developed and the quasi-fermi potentials for both electron and hole transport are found out by applying the principle of current continuity. Using these and further solving the 2-D Poisson’s equation self consistently for various subregions of the device, the drain current and surface potential are modeled subsequently. The model includes the effects of drain voltage, nanowire radius, temperature and Schottky barrier height. The accuracy of the derived results is tested using 3-D numerical technology computer aided design simulations. The proposed model can be used to study the behavior of ambipolar FETs having S/D spacers for varying device dimensions and also can be utilized for the future design of memory devices and circuits using spacer-based RFETS.