Image Force in Metal-Oxide-Metal Tunnel Junctions
Image Force in Metal-Oxide-Metal Tunnel Junctions
复制标题
DOI：
10.1007/978-1-4684-1752-4_10
复制
发表时间：
1969
期刊：
影响因子：
--
通讯作者：
J. Simmons
中科院分区：
文献类型：
--
作者：
J. Simmons
由于为了观察金属表面的电子发射，必须向金属提供能量，因此很明显，金属内部电子的势能低于金属外部静止电子的势能。其他理论论据支持这一结论(1)。因此，当电子穿过金属-真空界面时，它必须经历电势的变化。图1是Sommerfeld(2)设想的模型的能量图。金属用深度为v0的势能井表示；真空度代表金属内部静止电子的能量。在0°K时，以离散能级成对存在的电子填满了能量阱，达到能量n，即费米能级。从费米能级到真空能级的距离ψ=V0−η被称为金属的功函数，它表示在0°K时从金属内部释放电子所需的最小能量。
Since it is necessary to supply energy to a metal in order to observe electron emission from a metal surface, it is evident that the potential energy of an electron within a metal is lower than that of an electron at rest outside the metal. Other theoretical arguments support this conclusion (1). It follows then that the electron must undergo a change in potential as it crosses the metal-vacuum interface. Figure 1 is the energy diagram of the model envisaged by Sommerfeld (2). The metal is represented by a potential energy well of depthV0; the vacuum level represents the energy of an electron at rest within the metal. At 0°K the electrons, which exist in pairs in discrete energy levels, fill up the well to an energy n, the Fermi level. The distanceψ=V0−ηfrom the Fermi level to the vacuum level is known as the work function of the metal, and represents the minimum energy required to free electrons from the interior of the metal at 0°K.