Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon
Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon
复制标题
同位素控制硅中磷的低场电检测磁共振线宽
DOI：
10.1143/apex.4.021302
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发表时间：
2011
影响因子：
2.3
通讯作者：
and K. M. Itoh
中科院分区：
文献类型：
--
作者：
H. Morishita;E. Abe;W. Akhtar;L. S. Vlasenko;A. Fujimoto;K. Sawano;Y. Shiraki;L. Dreher;H. Riemann;N. V. Abrosimov;P. Becker;H.-J. Pohl;M. L. W. Thewalt;M. S. Brandt;and K. M. Itoh
研究了磷电子在硅中低场电探测磁共振（LFEDMR）的线宽，并与x波段电子顺磁共振（EPR）的线宽进行了比较。LFEDMR和EPR的线宽是相同的，尽管LFEDMR信号是基于自旋依赖的复合获得的，这表明磷的电子自旋与复合中心之间的相互作用足够强，可以进行LFEDMR检测，但足够弱，不会影响线宽。这种有利的平衡使得LFEDMR成为一种有吸引力的方法来阐明半导体中顺磁缺陷的低场行为。
The linewidth of the low-field electrically detected magnetic resonance (LFEDMR) of phosphorus electrons in silicon is investigated using samples with various 29 Si nuclear spin fractions and is compared to that of X-band electron paramagnetic resonance (EPR). The linewidths of LFEDMR and EPR are the same even though LFEDMR signals are obtained based on spin-dependent recombination, suggesting that the interaction between electron spins of phosphorus and recombination centers is strong enough for the LFEDMR detection but weak enough not to affect the linewidths. This favorable balance makes LFEDMR an attractive method to elucidate the low-field behavior of paramagnetic defects in semiconductors.