Comparative study of trap-limited hydrogen diffusion in amorphous SiC, Si0.66C0.33N1.33, and SiN1.33 films
Comparative study of trap-limited hydrogen diffusion in amorphous SiC, Si0.66C0.33N1.33, and SiN1.33 films
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非晶SiC、Si0.66C0.33N1.33和SiN1.33薄膜中陷阱限制氢扩散的比较研究
DOI：
10.1088/0953-8984/18/23/009
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
H. Baumann
中科院分区：
文献类型：
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作者：
H. Schmidt;G. Borchardt;U. Geckle;M. Bruns;H. Baumann
研究了氢示踪剂在非晶 SiC、Si0.66C0.33N1.33 和 SiN1.33 薄膜中的扩散，这些薄膜是通过射频磁控管反应溅射生产的，含有约 0.5 at.% 的氢。扩散实验是在700至1000°C的温度范围内进行的，采用离子注入氘示踪同位素和二次离子质谱法。推导的有效扩散率对于所有三种类型的材料几乎相同，并且遵循阿伦尼乌斯行为，活化能为 ΔE = 3.0–3.4 eV，指数前因子为 D0 = 10−4–10−5 m2 s−1。这些结果可以用氢的陷阱限制扩散机制来解释，其中示踪原子被碳和氮悬空键暂时捕获，这些悬键与氢的结合能大致相同。
Hydrogen tracer diffusion is studied in amorphous SiC, Si0.66C0.33N1.33, and SiN1.33 films which were produced by rf magnetron reactive sputtering and which contain about 0.5 at.% of hydrogen. The diffusion experiments were carried out in the temperature range between 700 and 1000 °C with ion-implanted deuterium tracer isotopes and secondary ion mass spectrometry. Effective diffusivities are derived which are nearly identical for all three types of material and which obey Arrhenius behaviours with activation energies of ΔE = 3.0–3.4 eV and pre-exponential factors of the order of D0 = 10−4–10−5 m2 s−1. These results can be explained with a trap-limited diffusion mechanism of hydrogen where the tracer atoms are temporarily trapped by carbon and nitrogen dangling bonds, which have approximately the same binding energy to hydrogen.