Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's
Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's
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赝晶 AlGaAs/InGaAs/GaAs MODFET 负微分电阻直流和高频特性的实验和理论研究
DOI：
10.1109/16.121681
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发表时间：
1992
影响因子：
3.1
通讯作者：
J. Kolodzey
中科院分区：
文献类型：
--
作者：
J. Laskar;J. M. Bigelow;J. Leburton;J. Kolodzey
本文研究了栅长为0.3 μ m的赝晶AlGaAs/InGaAs/GaAs调制掺杂场效应晶体管（MODFFET）I-V特性中的负微分电阻（NDR）。他们通过实验验证了在输入电路和输出电路中均存在突变倍数NDR。对于由电子发射引起的NDR，NDR发生在漏极电压（小于200 mV）和栅极电压（小于5 mV）的短范围内。作者提供了一个一般的解释，测量的DC结果的基础上隧道实空间传输（TRST）发生的，因为在InGaAs沟道和AlGaAs施主层的混合激发态的形成。在输入和输出电路中都验证了稳定反射的存在，在输出电路中具有稳定的宽带频率响应，至少为49 GHz。这些结果表明，在赝晶MODFFET中通过TRST的NDR可以提供不受电子从源到漏的渡越时间限制的宽带频率响应。>
The authors investigated the negative differential resistance (NDR) in the I-V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 mu m. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain. >