Remote n-type modulation doping of InAs quantum wells by ``deep acceptors'' in AlSb
Remote n-type modulation doping of InAs quantum wells by ``deep acceptors'' in AlSb
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DOI：
10.1063/1.353450
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发表时间：
1993-06
影响因子：
3.2
通讯作者：
Jun Shen;J. Dow;S. Ren;S. Tehrani;H. Goronkin
中科院分区：
文献类型：
--
作者：
Jun Shen;J. Dow;S. Ren;S. Tehrani;H. Goronkin
由于杂质在经历浅到深跃迁或深到假价跃迁时通常会改变其掺杂性质，单个缺陷，如Sb位上的阳离子，可以解释非故意掺杂的AlxGa1−xSb合金和InAs/AlxGa1−xSb超晶格和量子井结构的所有事实：(I)体相GaSb是p型；(Ii)体相AlSb是半绝缘的；(3)InAs量子阱厚度大于临界厚度Dc(x=1.0)的InAs/AlSb超晶格为n型，其中InAs浅深临界厚度函数Dc(X)约为≂100-≂150A，其中InAs/Al_xGa_1-≤_xSb超晶格的半绝缘；(4)InAs量子阱厚度小于DC(x=1.0)的InAs/AlSb超晶格是半绝缘的。此外，理论预测，Al0.5Ga0.5Sb和AlSb在非故意掺杂时将是半绝缘的，但可以分别在静水压力P：P≳90kbar和P≳150kbar的作用下转变为p型。这些掺杂物性质的变化，是一种非常重要的变化。
Due to the fact that impurities normally change their doping characters when they undergo shallow to deep transitions or deep‐to‐false‐valence transitions, a single defect, such as a cation on an Sb site, can explain all of the following facts for nonintentionally doped AlxGa1−xSb alloys and InAs/AlxGa1−xSb superlattices and quantum‐well structures: (i) Bulk GaSb is p type; (ii) bulk AlSb is semi‐insulating; (iii) InAs/AlSb superlattices with InAs quantum wells thicker than a critical thickness dc(x=1.0) are n type, where the InAs shallow–deep critical thickness function dc(x) is around ≂100–≂150 A for 0.5<x≤1.0 for InAs/AlxGa1−xSb superlattices; (iv) InAs/AlSb superlattices with InAs quantum wells thinner than dc(x=1.0) are semi‐insulating. In addition, the theory predicts that Al0.5Ga0.5Sb and AlSb will be semi‐insulating when nonintentionally doped, but can be converted to p type by the application of hydrostatic pressure P: P≳90 kbar and P≳150 kbar, respectively. These changes of doping character, whi...