A Sub-6-GHz 5G New Radio RF Transceiver Supporting EN-DC With 3.15-Gb/s DL and 1.27-Gb/s UL in 14-nm FinFET CMOS
A Sub-6-GHz 5G New Radio RF Transceiver Supporting EN-DC With 3.15-Gb/s DL and 1.27-Gb/s UL in 14-nm FinFET CMOS
复制标题
低于 6 GHz 5G 新型无线电 RF 收发器，采用 14 nm FinFET CMOS，支持 EN-DC，具有 3.15 Gb/s DL 和 1.27 Gb/s UL
DOI：
10.1109/jssc.2019.2938132
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发表时间：
2019
影响因子：
5.4
通讯作者：
Sanghoon Kang
中科院分区：
文献类型：
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作者：
Jongwoo Lee;K. Son;Hyung;Daechul Jeong;Ilyong Jong;Sanghyun Baek;Jae Hoon Lee;Ronghua Ni;Yongrong Zuo;Chih;Seungchan Heo;Sangwoo Han;T. Cho;Inyup Kang;Joonhee Lee;Byoungjoong Kang;Jeongyeol Bae;Jaehyuk Jang;Seunghyun Oh;Ji;Sanghoon Kang
世界上第一款支持5G sub-6 ghz新无线电（NR）和长期演进（LTE） E-UTRA新无线电双连接（EN-DC）的单芯片射频收发器，采用14nm FinFET CMOS技术。单片收发器集成了相同的主分集接收器（RXs）和7条管道，用于支持四个带间载波聚合（CA），三个4 $\times $ 4 MIMO，两个独立的发射机（TX）链，八个用于RX和TX的频率合成器，以及片上数字控制晶体振荡器（DCXO），以降低相位噪声和物料清单（BOM）成本。该接收器具有12个具有宽带特性的单端低噪声放大器（lna）。利用本文提出的管道结构和频带可切换变压器，在覆盖2G到sub-6 ghz 5G NR的整个频率范围内，减小了芯片尺寸，实现了6.5 ~ 9.3 dB的噪声系数（NF），带外（OOB） IIP3 +3 dbm，校正后OOB IIP2 +70 dbm以上。发射机采用低rx波段噪声和谐波抑制技术支持无表面声波（SAW）结构，对基带滤波器的带宽进行控制，实现100 mhz BW NR传输数据的数字预失真（DPD）操作。在n79的4G和5G频段，在+4-dBm输出功率下，测量到的误差矢量幅值（evm）分别为- 39.5 dB和+3.06-dBm输出功率下，测量到的误差矢量幅值（evm）为- 33.9 dB；在20mhz偏移时，测量到的2G的rx频段噪声为- 163 dBc。RX在LTE 1-CA模式下功耗为18mw， TX在n79模式下功耗为350mw。
The world’s first single-chip RF transceiver to support 5G sub-6-GHz new radio (NR) and long-term evolution (LTE) E-UTRA New Radio-Dual Connectivity (EN-DC) in 14-nm FinFET CMOS technology is presented. The single-chip transceiver integrates identical primary and diversity receivers (RXs) with seven pipelines for supporting four inter-band carrier aggregation (CA) with three 4 $\times $ 4 MIMO, two independent transmitter (TX) chains, eight frequency synthesizers for RX and TX, and on-chip digitally controlled crystal oscillator (DCXO) to reduce the phase noise and bill of material (BOM) cost. The receiver features 12 single-ended low-noise amplifiers (LNAs) with wideband characteristics. With the help of the proposed pipeline structure and frequency-band switchable transformer, the die size can be reduced despite covering the whole frequency range from 2G to sub-6-GHz 5G NR. It achieves the noise figure (NF) from 6.5 to 9.3 dB, +3-dBm out-of-band (OOB) IIP3, more than +70-dBm OOB IIP2 after calibration. For the transmitter, low RX-band noise and harmonic suppression technique are applied to support surface acoustic wave (SAW)-less architecture, and the bandwidth control of the baseband filter is implemented for the digital pre-distortion (DPD) operation of 100-MHz BW in NR transmit data. The measured error vector magnitudes (EVMs) in 4G and 5G bands of n79 are −39.5 dB at +4-dBm output power and −33.9 dB at +3.06-dBm output power, respectively, and the measured RX-band noise of 2G is −163 dBc at 20-MHz offset. The RX consumes 18 mW at LTE 1-CA mode and the TX consumes 350 mW at n79.