All-Electric Spin Control in Interference Single Electron Transistors
All-Electric Spin Control in Interference Single Electron Transistors
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DOI：
10.1021/nl901199p
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发表时间：
2009-08-01
期刊：
影响因子：
10.8
通讯作者：
Grifoni, Milena
中科院分区：
文献类型：
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作者：
Donarini, Andrea;Begemann, Georg;Grifoni, Milena
单粒子干涉是量子力学的核心。对真空中的电子(2，3)直到更大质量的C-60分子重复了典型的双缝实验(1)。(4)由磁通量穿线的介观环提供了固态类似物。(5，6)分子内干涉最近在分子结中被讨论。(7-11)这里我们建议利用干涉来实现对量子点中单电子自旋的全电子控制，这是自旋电子学(12-14)和自旋-量子比特应用非常理想的特性。(15-19)该器件由一个干扰单电子晶体管组成，(10，11)其中轨道简并电子态之间的相消干涉在特定偏置电压下产生电流阻塞。结果表明，在平行极化铁磁引线存在的情况下，系统上的干涉和交换相互作用产生了有效的能量重整化，产生了对多数自旋和少数自旋不同的阻塞偏向。因此，通过调节偏置电压，实现了对俘获电子自旋的完全控制。
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment(1) has been repeated with electrons in vacuum(2,3) up to the more massive C-60 molecules.(4) Mesoscopic rings threaded by a magnetic flux provide the solid-state analogues.(5,6) Intramolecular interference has been recently discussed in molecular junctions.(7-11) Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics(12-14) and spin-qubit applications.(15-19) The device consists of an interference single electron transistor,(10,11) where destructive interference between orbitally degenerate electronic states produces current blocking at specific bias voltages. We show that in the presence of parallel polarized ferromagnetic leads the interplay between interference and the exchange interaction on the system generates an effective energy renormalization yielding different blocking biases for majority and minority spins. Hence, by tuning the bias voltage full control over the spin of the trapped electron is achieved.