Invited) Room Temperature Bonding Using Thin Metal Films (Bonding Energy and Technical Potential)
Invited) Room Temperature Bonding Using Thin Metal Films (Bonding Energy and Technical Potential)
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特邀）使用金属薄膜的室温键合（键合能量和技术潜力）
DOI：
10.1149/06405.0317ecst
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Kon
中科院分区：
文献类型：
--
作者：
T. Shimatsu;M. Uomoto;H. Kon
使用薄金属膜的室温键合使用溅射沉积的两个平坦晶片表面。然后在真空或空气中将晶片上的两个膜键合。真空中的键合可以使用几乎任何金属膜来完成，即使每侧上的膜厚度为几埃。在厚度大于临界膜厚度时，键合能大于金属膜的表面能，这与金属膜和晶片之间形成薄的反应层有关。在空气中使用Au膜的键合也显示出大于Au膜的表面能的键合能，即使Au膜暴露于空气中的时间为168小时（1周）。还实现了晶圆与镜面抛光金属的键合，有效提高了散热效率。
Room temperature bonding using thin metal films uses two flat wafer surfaces with sputter deposition. Then two films on wafers are bonded in vacuum or in air. Bonding in vacuum can be accomplished using almost any metal film, even with film thickness of a few angstroms on each side. The bonding energy is greater than the surface energy of metal films at thicknesses greater than the critical film thickness, which is related to the formation of thin reactive layers between metal films and wafers. Bonding in air using Au films also shows a bonding energy greater than the surface energy of Au films, even with an exposure time of Au films to air of 168 h (1 week). Bonding of wafers and mirrorpolished metals was also achieved, which is effective for enhancing the heat dissipation efficiency.