Samarium-doped Bi4Ti3O12 thin films grown on SiO2/p-Si(111) by spin coating metalorganic solution decomposition method
Samarium-doped Bi4Ti3O12 thin films grown on SiO2/p-Si(111) by spin coating metalorganic solution decomposition method
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DOI：
10.1016/j.matchemphys.2004.06.017
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发表时间：
2004-11
影响因子：
4.6
通讯作者：
Ch.H. Yang;Z. Wang;Hongyan Xu;Xun Sun;Jianru Han
中科院分区：
文献类型：
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作者：
Ch.H. Yang;Z. Wang;Hongyan Xu;Xun Sun;Jianru Han
采用旋涂金属有机溶液分解法在SiO2/p-Si（111）衬底上制备了Sm掺杂的Bi 4 Ti 3 O 12（Bi3.15Sm0.85Ti3O12）薄膜。用X射线衍射分析了薄膜的结构特性。利用原子力显微镜研究了表面形貌和质量。该薄膜具有优异的绝缘性能和耐击穿性能。顺时针方向的电滞曲线表明薄膜为极化型开关，存储窗口约为1.2V。在100 kHz频率下的介电常数和损耗因子分别为100和0.15。
Samarium-doped Bi4Ti3O12(Bi3.15Sm0.85Ti3O12) thin films have been prepared on SiO2/p-Si(111) substrate by spin coating metalorganic solution decomposition method. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied using atomic force microscopy. The films exhibit excellent insulating properties and resistance to breakdown. The clockwise hysteresis curve shows that the films are polarization-type switching and the memory window is about 1.2V. The dielectric constant and dissipation factor at a frequency of 100kHz are 100 and 0.15, respectively.