Growth of α- and β-Ga2O3epitaxial layers on sapphire substrates using liquid-injection MOCVD
Growth of α- and β-Ga2O3epitaxial layers on sapphire substrates using liquid-injection MOCVD
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DOI：
10.1088/1361-6641/ababdc
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发表时间：
2020-11-01
影响因子：
1.9
通讯作者：
Tapajna, M.
中科院分区：
文献类型：
--
作者：
Egyenes-Porsok, F.;Gucmann, F.;Tapajna, M.
Ga2O_3是一种宽禁带半导体材料，在功率和高压电子器件方面具有巨大的潜力。报道了用液态注入金属-有机化学气相沉积(Li-MOCVD)方法在蓝宝石衬底上生长未掺杂的α相和β相Ga(2)O(3)。使用相同的前驱体(乙酰丙酮镓)，沉积温度为700℃，晶相的选择由蓝宝石衬底的取向控制，其中α相和β相分别在m平面和c平面上生长。X射线衍射结果表明，α-Ga(2)O(3)薄膜具有外延特性，而β-Ga(2)O(3)薄膜具有高度织构结构。在所考察的流量下，氧气流量对α-Ga(2)O(3)的相纯度也有很大的影响。系统地研究了不同氧气流量下生长的薄膜的光学和电学性质。在相对较高的沉积温度下，Li-MOCVD生长的α相Ga(2)O(3)层拓宽了Ga2 O3基电子器件和光电子器件的高温工艺。
Ga2O3, a wide-bandgap semiconductor material, offers a great potential for power and high-voltage electronic devices. We report on the growth of undoped alpha- and beta-phase Ga(2)O(3)using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD) on sapphire substrates. Using the same precursor (gallium acetylacetonate) and deposition temperature of 700 degrees C, the phase selection was controlled by the sapphire substrate orientation, where the growth of alpha- and beta-phase Ga(2)O(3)was achieved onm- andc-plane surface, respectively. As deduced from x-ray diffraction,alpha-Ga(2)O(3)films show epitaxial character, while beta- Ga(2)O(3)films exhibit highly textured structure. Oxygen flow was also found to have a strong impact on the phase purity of alpha-Ga(2)O(3)for the flow rates examined. Optical and electrical properties of the layers grown at different oxygen flow rates were also studied systematically. LI-MOCVD growth of alpha-phase Ga(2)O(3)layers at relatively high deposition temperature widens the high-temperature processing of the Ga2O3-based electronic and optoelectronic devices.