Photon emission characteristics of avalanche photodiodes
Photon emission characteristics of avalanche photodiodes
复制标题
雪崩光电二极管的光子发射特性
DOI：
10.1117/1.1950087
复制
发表时间：
2005
影响因子：
1.3
通讯作者：
Suotang Jia
中科院分区：
文献类型：
--
作者：
Tao Huang;Junhu Shao;Xiaobo Wang;Liantuan Xiao;Suotang Jia
本文研究了雪崩光电二极管APD的光子发射随时间的衰减规律.反向电压的急剧上升可以导致更高的光子发射概率。对于硅雪崩光电二极管，光子发射具有从500到1100 nm的宽光谱分布，其中两个峰值分别在750和994 nm处。随着APD反向电流的增加，发射光子数增加44 Mcount/ sm A sr。这表明施加到APD的反向电流而不是反向电压是光子发射的主要决定因素。进一步证明了光子发射的分布是一个超泊松分布。© 2005年社会
Temporal decay of photon emission from avalanche photo- diodes APDs is demonstrated. The steep rise of the reverse voltage can cause a higher probability of photon emission. For a silicon ava- lanche photodiode, the photon emission has a broad spectral distribution from 500 to 1100 nm with two peaks at 750 and 994 nm, respectively. The number of emitted photons increases by 44 Mcount/ sm A sr as the APD's reverse current increases. This suggests that the reverse current, instead of the reverse voltage, applied to the APD is the main determi- nant of the photon emission. It is furthermore shown that the distribution of the photon emission is a super-Poisson distribution. © 2005 Society of