Physical Model for the Steep Subthreshold Slope in Ferroelectric FETs
Physical Model for the Steep Subthreshold Slope in Ferroelectric FETs
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DOI：
10.1109/led.2018.2829604
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发表时间：
2018-02
影响因子：
4.9
通讯作者：
J. van Houdt;P. Roussel
中科院分区：
文献类型：
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作者：
J. van Houdt;P. Roussel
多年来，铁电 FET 中已有低于 60 mV/十倍频程开关的报道。然而，到目前为止，这些报告缺乏完整的物理解释，因为它们经常使用负电容模型来解释实验观察结果。由于负电容本身不是一个物理概念，因此我们提出了一种依赖于铁电层的非线性和非平衡行为的替代模型。结果表明，陡峭的亚阈值斜率可以通过两步切换过程（称为成核和域生长）来解释。利用域增长的概念，我们可以解释陡坡效应。添加一个简单的数学模型来进一步描述这种现象，并研究其对于在亚 10 nm 时代获得陡坡晶体管的最终好处。
Since many years, sub-60 mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they often use a negative capacitance model to explain the experimental observations. Because negative capacitance as such is not a physical concept, we propose an alternative model that relies on the non-linear and non-equilibrium behavior of the ferroelectric layer. It is shown that a steep subthreshold slope can be explained by a 2-step switching process, referred to as nucleation and domain growth. Making use of the concept of domain growth, we can explain the steep slope effect. A simple mathematical model is added to further describe this phenomenon, and to investigate its eventual benefit for obtaining steep slope transistors in the sub-10 nm era.