The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
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DOI：
10.1021/nl0508624
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发表时间：
2005-07-01
期刊：
影响因子：
10.8
通讯作者：
Avouris, P
中科院分区：
文献类型：
--
作者：
Chen, ZH;Appenzeller, J;Avouris, P
单壁碳纳米管场效应晶体管(CNFET)具有肖特基势垒(SB)特性。然而，目前还不清楚是什么因素控制了SB的规模。在这里，我们提出了对这个问题的第一次统计分析。我们发现，超过100个器件的大数据集可以被一个模型一致地解释，该模型将CNFET的导通电流与隧道势垒相关联，隧道势垒的高度由纳米管直径和源/漏金属接触的性质决定。我们的研究可以确定管径和金属类型的理想组合，以提供CNFET的最佳性能。
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling barrier whose height is determined by the nanotube diameter and the nature of the source/drain metal contacts. Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET.