Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film
Aligned Growth of Millimeter-Size Hexagonal Boron Nitride Single-Crystal Domains on Epitaxial Nickel Thin Film
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外延镍薄膜上毫米级六方氮化硼单晶畴的定向生长
DOI：
10.1002/smll.201604179
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发表时间：
2017-05-10
期刊：
影响因子：
13.3
通讯作者：
Meng, Xiang-Min
中科院分区：
文献类型：
--
作者：
Meng, Junhua;Zhang, Xingwang;Meng, Xiang-Min
原子级薄的六方氮化硼（h-BN）对于许多应用如石墨烯基器件的介电层或衬底正获得显著关注。对于这些应用，强烈期望合成具有很少缺陷的高质量和大面积h-BN层。在这项工作中，演示了通过离子束溅射沉积在外延Ni（111）/蓝宝石衬底上定向生长毫米级单晶h-BN畴。在优化的生长条件下，单晶h-BN域的边长达到0.6毫米，迄今为止报道的最大。大尺寸h-BN畴的形成主要是由于Ni晶界的减少和Ni膜结晶度的提高。此外，h-BN畴显示出良好的取向和优异的介电性能。此外，蓝宝石衬底可以重复使用，几乎没有限制。本工作为大规模合成高质量h-BN薄膜提供了一种有效的方法。
Atomically thin hexagonal boron nitride (h-BN) is gaining significant attention for many applications such as a dielectric layer or substrate for graphene-based devices. For these applications, synthesis of high-quality and large-area h-BN layers with few defects is strongly desirable. In this work, the aligned growth of millimeter-size single-crystal h-BN domains on epitaxial Ni (111)/sapphire substrates by ion beam sputtering deposition is demonstrated. Under the optimized growth conditions, single-crystal h-BN domains up to 0.6 mm in edge length are obtained, the largest reported to date. The formation of large-size h-BN domains results mainly from the reduced Ni-grain boundaries and the improved crystallinity of Ni film. Furthermore, the h-BN domains show well-aligned orientation and excellent dielectric properties. In addition, the sapphire substrates can be repeatedly used with almost no limit. This work provides an effective approach for synthesizing large-scale high-quality h-BN layers for electronic applications.