Electron diffraction from epitaxial crystals, a convergent-beam electron diffraction of the interface structure for NiSi2/Si and Al/GaAs
Electron diffraction from epitaxial crystals, a convergent-beam electron diffraction of the interface structure for NiSi2/Si and Al/GaAs
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外延晶体的电子衍射，NiSi2/Si 和 Al/GaAs 界面结构的会聚束电子衍射
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
M. Missous
中科院分区：
文献类型：
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作者：
D. Eaglesham;C. Kiely;D. Cherns;M. Missous
摘要本文从理论和实验两方面研究了相干外延双晶平面形貌样品的电子衍射（用布洛赫波方法使用重合点阵）。CBED模式的对称性可以用来发现双晶体的对称性，从而限制了两个晶体可能的位移。数值计算表明，这些效应对两种晶体的不同位移应该是高度敏感的。理论还预测，高阶劳厄带（HOLZ）环的特征可以用来确定这种刚体位移。在NiSi2/Si（001）体系上的实验显示了先前确定的“四面体协调”界面结构的对称性和HOLZ特征。该技术随后被应用于分子束外延生长的Al/GaAs（001）。图案的对称性表明了高度对称形式的相对位移；然而，对HOLZ的审查……
Abstract Electron diffraction from a plan-view specimen of a coherent epitaxial bicrystal is studied both theoretically (in a Bloch wave approach using a coincident site lattice) and experimentally (using convergent-beam electron diffraction (CBED)). CBED pattern symmetries can be used to find the symmetry of the bicrystal, thus limiting the possible displacements of the two crystals. Numerical calculations are made to show that these effects should be highly sensitive to different shifts of the two crystals. Theory also predicts that features in the higher-order Laue zone (HOLZ) rings can then be used to determine this rigid-body shift. Experiments on the NiSi2/Si(001) system show both the symmetry and the HOLZ features predicted for the previously determined ‘tetrahedrally coordinated’ interface structure. The technique is then applied to molecular-beam-epitaxy-grown Al/GaAs(001). The symmetry of the patterns indicates a relative displacement of high-symmetry form; examination of the HOLZ, however, indi...