Nonequilibrium mean-field theory of resistive phase transitions
Nonequilibrium mean-field theory of resistive phase transitions
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DOI：
10.1103/physrevb.98.035145
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发表时间：
2018-07-27
影响因子：
3.7
通讯作者：
Kotliar, Gabriel
中科院分区：
文献类型：
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作者：
Han, Jong E.;Li, Jiajun;Kotliar, Gabriel
我们研究了在金属-绝缘体相变附近由恒定电场驱动的固体电阻相变的量子力学起源。我们进行了非平衡平均场分析的驱动耗散绝缘子，我们解决了大部分解析。我们发现，绝缘体到金属的转变（IMT）和金属到绝缘体的转变（MIT）进行两个不同的电子机制：朗道-齐纳过程和焦耳加热的金属状态的不稳定，分别。然而，我们表明，这两个制度可以统一在一个共同的有效的热描述，其中的有效温度T-eff取决于系统的状态。这解释了最近的实验测量中，热电子温度在IMT被发现匹配的平衡转变温度。我们的分析方法使我们能够制定可检验的预测的非解析行为的I-V关系附近的绝缘体到金属的转变。在这些成功的基础上，我们提出了一个有效的Ginzburg-Landau理论，该理论为将空间波动结合起来并使理论更接近于相关材料中电阻开关的现实描述铺平了道路。
We investigate the quantum mechanical origin of resistive phase transitions in solids driven by a constant electric field in the vicinity of a metal-insulator transition. We perform a nonequilibrium mean-field analysis of a driven-dissipative symmetry-broken insulator, which we solve analytically for the most part. We find that the insulator-to-metal transition (IMT) and the metal-to-insulator transition (MIT) proceed by two distinct electronic mechanisms: Landau-Zener processes and the destabilization of the metallic state by Joule heating, respectively. However, we show that both regimes can be unified in a common effective thermal description, where the effective temperature T-eff depends on the state of the system. This explains recent experimental measurements in which the hot-electron temperature at the IMT was found to match the equilibrium transition temperature. Our analytic approach enables us to formulate testable predictions on the nonanalytic behavior of I-V relation near the insulator-to-metal transition. Building on these successes, we propose an effective Ginzburg-Landau theory which paves the way to incorporating spatial fluctuations and to bringing the theory closer to a realistic description of the resistive switchings in correlated materials.