AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction
AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction
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具有分布式栅极的 AlGaN/GaN HEMT 可降低沟道温度
DOI：
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发表时间：
2012
影响因子：
4.3
通讯作者：
Amr A. Ibrahim
中科院分区：
文献类型：
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作者：
A. Darwish;H. A. Hung;Amr A. Ibrahim
电子设备中的自热降低了它们的性能和寿命。提出了一种降低沟道温度的新型高电子迁移率晶体管(HEMT)版图。为了减少自热，新的分布式栅极(DG)HEMT沿着每个栅条配置了多个有源和非有源部分。仿真和实验结果表明，新布局的性能得到了改善。与传统的HEMT相比，新型DG GaN HEMT的沟道温度从178°C降低到150°C，同时输出功率增加了3分贝，寿命增加了13倍。
Self heating in electronic devices reduces their performance and lifetime. A novel high electron-mobility transistor (HEMT) layout that reduces the channel temperature is presented. To decrease self heating, the new distributed gate (DG) HEMT is configured with multiple, active, and nonactive sections along each gate-stripe. Simulations and experimental results indicating the improved performance of the new layout are presented. Compared to a conventional HEMT, the fabricated novel DG GaN HEMT demonstrated a decrease in channel temperature from 178 °C to 150 °C, accompanied by a 3-dB increase in output power, and 13-fold increase in lifetime.