Efficient InGaN-based yellow-light-emitting diodes
Efficient InGaN-based yellow-light-emitting diodes
复制标题
高效 InGaN 基黄色发光二极管
DOI：
10.1364/prj.7.000144
复制
发表时间：
2019-02-01
影响因子：
7.6
通讯作者：
Liu, Junlin
中科院分区：
文献类型：
--
作者：
Jiang, Fengyi;Zhang, Jianli;Liu, Junlin
Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A/cm2 and 33.7% at 3 A/cm2. The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.
