Nucleation and initial growth processes of diamond thin films for stripper foils
Nucleation and initial growth processes of diamond thin films for stripper foils
复制标题
剥离箔用金刚石薄膜的成核和初始生长过程
DOI：
10.1016/j.nima.2008.02.078
复制
发表时间：
2008
影响因子：
1.4
通讯作者：
Y. Yokota
中科院分区：
文献类型：
--
作者：
T. Tachibana;C. Ichihara;N. Kawakami;Y. Yokota
采用化学气相沉积法在硅衬底上合成金刚石膜，制备了碳离子束剥离膜。采用强化成核预处理工艺，获得了表面平整度良好的细晶多晶金刚石薄膜。通过蚀刻金刚石膜良好粘附在其上的硅衬底的一部分来形成独立式金刚石箔。在初步的寿命评估中，1-3μ m厚的金刚石薄膜在3.2MeV Ne+离子束电荷剥离下持续了20 - 420分钟。
Carbon ion beam stripper foils were fabricated from diamond films synthesized on silicon via chemical vapor deposition. Fine-grained polycrystal diamond foils with decent surface flatness were obtained using a nucleation enhancement pretreatment process. Freestanding diamond foils were formed by etching a portion of the silicon substrate on which the diamond films well-adhered. In preliminary lifetime evaluations, the 1–3μm-thick diamond foils lasted between 20 and 420min for 3.2MeV Ne+ion-beam charge stripping.