Size-controlled highly luminescent silicon nanocrystals:: A SiO/SiO2 superlattice approach
Size-controlled highly luminescent silicon nanocrystals:: A SiO/SiO2 superlattice approach
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DOI：
10.1063/1.1433906
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发表时间：
2002-01-28
影响因子：
4
通讯作者：
Bläsing, J
中科院分区：
文献类型：
--
作者：
Zacharias, M;Heitmann, J;Bläsing, J
SiO/SiO2超晶格的相分离和热结晶形成有序排列的硅纳米晶体。该制备方法与硅技术完全兼容，通过使用恒定的层化学计量，可以独立控制颗粒大小、颗粒密度和空间位置。透射电镜研究证实了样品的尺寸控制，纳米晶体尺寸上限为3.8、2.5和2.0 nm，而不降低更小尺寸的硅纳米晶体密度。纳米晶体在可见光和近红外区具有较强的发光强度。观察到发光的蓝移与尺寸有关，发光强度与多孔硅相当。几乎与尺寸无关的无漂白效应发光强度间接证明了实现了对晶体尺寸和数量的独立控制。(C) 2002年美国物理研究所。
Phase separation and thermal crystallization of SiO/SiO2 superlattices results in ordered arranged silicon nanocrystals. The preparation method which is fully compatible with Si technologies enables independent control of particle size as well as of particle density and spatial position by using a constant stoichiometry of the layers. Transmission electron microscopy investigations confirm the size control in samples with an upper limit of the nanocrystal sizes of 3.8, 2.5, and 2.0 nm without decreasing the silicon nanocrystal density for smaller sizes. The nanocrystals show a strong luminescence intensity in the visible and near-infrared region. A size-dependent blueshift of the luminescence and a luminescence intensity comparable to porous Si are observed. Nearly size independent luminescence intensity without bleaching effects gives an indirect proof of the accomplishment of the independent control of crystal size and number. (C) 2002 American Institute of Physics.