Sodium incorporation strategies for CIGS growth at different temperatures
Sodium incorporation strategies for CIGS growth at different temperatures
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DOI：
10.1016/j.tsf.2004.11.071
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发表时间：
2005-06-01
期刊：
影响因子：
2.1
通讯作者：
Tiwari, A
中科院分区：
文献类型：
--
作者：
Rudmann, D;Brémaud, D;Tiwari, A
将钠并入Cu（In，Ga）Se-2（CIGS）吸收层和低温吸收体生长工艺是柔性CIGS太阳能电池的加工的重要问题，特别是当使用聚合物基板时。已知在CIGS生长期间存在的Na影响生长动力学并导致结构和电子改性的吸收剂材料。随着沉积后Na的掺入，主要的电子性质被改变。我们比较了太阳能电池的性能处理与Na扩散从玻璃基板在生长过程中与沉积后的Na掺入的细胞，从而获得了一个指示的意义，Na诱导的修改CIGS生长的电池效率。当吸收体在低衬底温度（低于500摄氏度）下生长时，我们发现具有沉积后并入的Na的吸收体表现更好。这归因于Na对CIGS相形成的阻碍影响，这在生长温度为370 ℃时变得最明显。在较高的基底温度（约500 ℃或高于500 ℃）下，在Na存在下生长的细胞的性能变得相似或上级，这可能表明一旦超过某一生长温度，Na对CIGS生长的有益影响。在沉积后Na掺入的情况下，在400摄氏度的衬底温度下实现了13.8%的电池效率。(c)2004 Elsevier B. V.保留所有权利。
Incorporation of sodium into Cu(In,Ga)Se-2 (CIGS) absorber layers and low-temperature absorber growth processes are important issues for the processing of flexible CIGS solar cells, particularly when polymer substrates are used. Na present during growth of CIGS is known to influence the growth kinetics and to lead to structurally and electronically modified absorber material. With post-deposition Na incorporation, predominantly electronic properties are altered. We compared the performances of solar cells processed with Na diffusing from the glass substrate during growth with those of cells with post-deposition Na incorporation and thus obtained an indication of the significance of Na-induced modifications of CIGS growth for cell efficiency. When the absorbers were grown at low substrate temperatures (below 500 degrees C) we found that absorbers with post-deposition-incorporated Na performed better. This is attributed to an impeding influence of Na on CIGS phase formation, which became most apparent when the growth temperature was 370 degrees C. With higher substrate temperatures (around or above 500 degrees C), the performance of cells grown in the presence of Na became similar or superior, which might indicate a beneficial influence of Na on CIGS growth once a certain growth temperature is exceeded. With post-deposition Na incorporation, a cell efficiency of 13.8% was achieved at 400 degrees C substrate temperature. (c) 2004 Elsevier B.V. All rights reserved.