The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
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DOI：
10.1088/2053-1583/3/3/035004
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发表时间：
2016-09-01
期刊：
影响因子：
5.5
通讯作者：
Grasser, Tibor
中科院分区：
文献类型：
--
作者：
Illarionov, Yury Yu;Rzepa, Gerhard;Grasser, Tibor
二硫化钼晶体管传输特性中常见的滞后现象通常与栅极绝缘体中的电荷陷阱有关。由于在硅技术中，这种陷阱会导致严重的可靠性问题，因此我们对滞后和最重要的可靠性问题——偏温不稳定性进行了综合研究。我们使用带有SiO2和hBN绝缘体的单层MoS2场效应管，并证明了这两种现象确实是由于栅极绝缘体中的陷阱，其时间常数分布在很宽的时间尺度上，其中快的导致滞后，慢的导致偏温不稳定。我们的数据表明，使用hBN作为栅极绝缘体大大减少了可访问的慢阱的数量，从而提高了可靠性。然而，由于电荷捕获的热激活性质，hBN绝缘子的可靠性随着温度的升高而恶化。
The commonly observed hysteresis in the transfer characteristics of MoS2 transistors is typically associated with charge traps in the gate insulator. Since in Si technologies such traps can lead to severe reliability issues, we perform a combined study of both the hysteresis as well as the arguably most important reliability issue, the bias-temperature instability. We use single-layer MoS2 FETs with SiO2 and hBN insulators and demonstrate that both phenomena are indeed due to traps in the gate insulator with time constants distributed over wide timescales, where the faster ones lead to hysteresis and the slower ones to bias-temperature instabilities. Our data show that the use of hBN as a gate insulator considerably reduces the number of accessible slow traps and thus improves the reliability. However, the reliability of hBN insulators deteriorates with increasing temperature due to the thermally activated nature of charge trapping.