Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
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GaAs (100) 衬底上的金属有机气相外延生长高质量立方氮化镓
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
R. Ito
中科院分区：
文献类型：
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作者：
Jun Wu;H. Yaguchi;K. Onabe;Y. Shiraki;R. Ito
本文报道了用低压金属有机物气相外延法在GaAs（100）衬底上生长高质量立方GaN薄膜。GaN膜呈现出没有裂纹的光滑表面。X射线衍射显示GaN膜的立方性质。ω扫描X射线摇摆曲线表明，随着生长温度的升高，GaN薄膜的晶体质量明显提高。光致发光测量证实了立方GaN薄膜的高质量。在300 K下，立方GaN薄膜的激子发射半峰全宽窄至70 meV。
We report on the growth of high quality cubic GaN films on GaAs (100) substrates by low pressure metalorganic vapor phase epitaxy. The GaN films exhibit a smooth surface which is free from cracks. X-ray diffraction shows the cubic nature of the GaN films. X-ray rocking curve with ω scan shows that the crystal quality of GaN films improves markedly with increasing growth temperatures. Photoluminescence measurements confirm the high quality of the cubic GaN films. The full width at half maximum of excitonic emission from the cubic GaN films is as narrow as 70 meV at 300 K.