Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
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DOI：
10.1016/j.jallcom.2018.02.178
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发表时间：
2018-06
影响因子：
6.2
通讯作者：
Kai Yu;Fan Yang;H. Cong;Lin Zhou;Qingyun Liu;Lichun Zhang;B. Cheng;C. Xue;Y. Zuo;
中科院分区：
文献类型：
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作者：
Kai Yu;Fan Yang;H. Cong;Lin Zhou;Qingyun Liu;Lichun Zhang;B. Cheng;C. Xue;Y. Zuo;
在这项工作中，一个简单的方法来制造绝缘体上的锗（GeOI），通过外延工艺（在硅晶片上生长的Ge），苯并环丁烯键合，和薄膜转移。该方法对于GeOI的制造是高度可靠的，GeOI是一个完整的2英寸晶片，具有均匀和优异的材料质量。此外，原子力显微镜（AFM），透射电子显微镜（TEM），和拉曼光谱表明，GeOI具有良好的表面和高的晶体质量。由于键合前在Ge上形成了SiO2保护层，GeOI与绝缘体之间具有良好的界面。此外，由于良好的界面和高质量的Ge沟道，基于GeOI的背栅p型金属氧化物半导体场效应晶体管（MOSFET）表现出优异的性能。获得了高达332.6 cm 2/V·s的峰值场效应空穴迁移率，接近Smart Cut™的基于GeOI的最佳伪MOSFET（400 cm 2/V·s）。
In this work, an easy method for fabricating germanium on insulator (GeOI) was demonstrated through epitaxy process (the growth of Ge on silicon wafer), benzocyclobutene bonding, and film transfer. The method is highly reliable for the fabrication of GeOI, which is a complete 2 inch wafer with homogeneous and excellent material quality. Moreover, atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy showed that GeOI exhibits good surface and high crystal quality. GeOI has a good interface between transferred Ge and insulator because of the protective layer of SiO2on Ge before bonding. Furthermore, a back-gate p-type metal–oxide–semiconductor field-effect transistors (MOSFET) based on GeOI showed an excellent performance due to good interface and high-quality Ge channel. A peak field-effect hole mobility as high as 332.6 cm2/V·s was obtained, which is close to that of a best pseudo-MOSFET based on GeOI by Smart Cut™ (400 cm2/V·s).