QUANTUM-WELL HETEROSTRUCTURE LASERS
QUANTUM-WELL HETEROSTRUCTURE LASERS
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DOI：
10.1109/jqe.1980.1070447
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发表时间：
1980-01-01
影响因子：
2.5
通讯作者：
DAPKUS, PD
中科院分区：
文献类型：
--
作者：
HOLONYAK, N;KOLBAS, RM;DAPKUS, PD
描述了量子阱半导体激光器工作时特有的各种特性，并用金属有机化学气相沉积（MO-CVD）生长的单量子阱和多量子阱AlxGa 1-xAs-GaAs异质结构的数据加以说明。描述了能够连续室温（CW 300 K）操作的光泵浦和p-n二极管激光器（注入激光器）。载流子收集，热化，和量子阱带填充的基本问题被认为是明确的限制单量子阱激光器的操作，以及如何克服这些可以与多个量子阱有源区。量子阱异质结构的阶跃态密度可以改善半导体激光器的工作性能。此外，它表明，声子参与量子阱激光器的操作，这是没有预料到的，是一个主要的（甚至占主导地位）的影响，也许是声子发射本身在紧凑的有源区被刺激。除了量子阱层在半导体激光器的有源区的设计中提供的明显的自由度之外，量子阱激光器还表现出阈值电流密度对温度的较小的敏感性，这可以用量子阱有源区中的阶跃状态密度和受干扰的电子和声子分布来解释。在通常的表达式中，对于T0，已得到了高达C的值。由于光泵多量子阱MO-CVD AlxGa 1-xAs-GaAs异质结构已作为CW 300 K激光器工作，仅具有5-10 mW的光激发（未校正聚焦和窗口损失，Å），因此建议可以制造量子阱激光二极管，使其在101 mA甚至更低的激发下工作。
The various features peculiar to the operation of quantum-well semiconductor lasers are described and illustrated with data on single- and multiple-quantum-well AlxGa1-xAs-GaAs heterostructures grown by metalorganic chemical vapor deposition (MO-CVD). Photo-pumped and p-n diode lasers (injection lasers) are described that are capable of continuous room temperature (CW 300 K) operation. The basic problems of carrier collection, thermalization, and quantum-well band filling are considered and have made clear the limits on single quantum-well laser operation and how these can be overcome with multiple quantum-well active regions. The idea that the steplike density-of-states of a quantum-well heterostructure can improve the operation of a semiconductor laser is shown to be valid. Also, it is shown that phonon participation in the operation of a quantum-well laser, which was not anticipated, is a major (even dominant) effect, with perhaps the phonon emission itself in the compact active region being stimulated. Besides the obvious freedom that quantum-well layers offer in how the active region of a semiconductor laser can be designed, quantum-well lasers are shown to exhibit a lesser sensitivity of the threshold current density on temperature, which is explained in terms of the step-like density-of-states and the disturbed electron and phonon distributions in the quantum-well active regions. Values as high asC have been obtained for T0in the usual expression. Since photopumped multiple-quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructures have operated as CW 300 K lasers with only 5-10 mW of photoexcitation (uncorrected for focusing and window losses,Å), it is suggested that quantum-well laser diodes can be made that will operate at ∼1 mA or even less excitation.