Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180°C by Plasma Chemical Vapor Deposition
Solid Phase Crystallization in Initial Growth Region of Polycrystalline Silicon Layer During Deposition at 180°C by Plasma Chemical Vapor Deposition
复制标题
180℃等离子体化学气相沉积过程中多晶硅层初始生长区的固相结晶
DOI：
10.1143/jjap.42.l1347
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发表时间：
2003
影响因子：
1.5
通讯作者：
H. Okamoto
中科院分区：
文献类型：
--
作者：
T. Toyama;R. Muhida;Tomokazu Harano;T. Sugano;M. Okajima;H. Okamoto
通过透射电子显微镜测量研究了低温生长的多晶硅（poly-Si）的微观结构。采用等离子化学气相沉积法在 180°C 下制备了两层不同厚度的 n-i-p 多晶硅层。在 0.5 µm 厚的多晶硅层底部观察到约 50 nm 厚的非晶富集层。同时，在 2.4 µm 厚的多晶硅层的前数百纳米中，发现由于生长在衬底 n 层上的晶柱而导致结晶分数增加。讨论了在初始生长区域沉积至基底期间的固相结晶。
Microstructures of low-temperature-grown polycrystalline Si (poly-Si) have been studied by transmission electron microscope measurements. Two poly-Si layers with different thicknesses in the n-i-p structure were prepared by plasma chemical vapor deposition at 180°C. The ∼50-nm-thick amorphous-rich layer is observed at the bottom of the 0.5-µm-thick poly-Si layer. Meanwhile, in the first hundreds of nanometers in the 2.4-µm-thick poly-Si layer, an increase in the crystalline fraction due to crystalline columns grown onto the substrate n-layer is found. Solid phase crystallization during the deposition in the initial growth region down to the substrate is discussed.