Interband electronic Raman scattering inp-silicon
Interband electronic Raman scattering inp-silicon
复制标题
p-硅带间电子拉曼散射
DOI：
10.1103/physrevb.25.7619
复制
发表时间：
1982
影响因子：
3.7
通讯作者：
M. Balkanski
中科院分区：
文献类型：
--
作者：
M. Kanehisa;R. Wallis;M. Balkanski
考虑到p型硅的详细能带结构，计算了p型硅价带间跃迁的电子拉曼散射效率。与各向同性模型相反，真实的光谱反映了带的各向异性：光谱从零延伸到相当大的散射频率，并带有长尾;在大约500-600 cm− 1处出现峰值。结果与Jouanne的实验进行了比较，并发现是在公平的协议。
The electronic Raman scattering efficiency for interband transitions between valenceband states of p-type silicon is calculated taking into account the detailed band structure. In contrast to the isotropic model, the real spectrum reflects the band anisotropy: the spectrum extends from zero to rather large scattering frequency with a long tail; there appears a peak at about 500-600 cm− 1. The result is compared with the experiment of Jouanne and is found to be in fair agreement.