Characteristics of GaN-based laser diodes for post-DVD applications
Characteristics of GaN-based laser diodes for post-DVD applications
复制标题
DOI：
10.1002/pssa.200405114
复制
发表时间：
2004-09
期刊：
影响因子：
--
通讯作者：
O. Nam;K. Ha;J. Kwak;S. Lee;K. K. Choi-K.;T. Chang;S. Chae;W. S. Lee;Y. Sung;H. Paek
中科院分区：
文献类型：
--
作者：
O. Nam;K. Ha;J. Kwak;S. Lee;K. K. Choi-K.;T. Chang;S. Chae;W. S. Lee;Y. Sung;H. Paek
我们研究了在LEO-GaN/蓝宝石衬底和自支撑GaN衬底上生长的高性能GaN基激光二极管的特性。连续工作时，最大输出功率为300 mW。工作电流和电压分别为53 mA和4.67 V，30 mW的输出功率。激光二极管的热模拟和结温测量结果表明，采用蓝宝石衬底时，外延向下键合是必不可少的。提出Mg向有源层的扩散是GaN基激光二极管退化的主要原因。
We investigated characteristics of high performance GaN-based laser diodes grown on LEO-GaN/ sapphire and free-standing GaN substrates. The maximum output power was 300 mW under cw operation. The operation current and voltage were 53 mA and 4.67 V, respectively, for 30 mW-output power. Thermal simulation and junction temperature measurement of laser diodes showed that epi-down bonding was essential for the use of sapphire substrate. It was proposed that Mg diffusion into active layers was responsible for the degradation mechanism of GaN-based laser diodes.