Properties of a-SiC:H films and solar cells
Properties of a-SiC:H films and solar cells
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a-SiC:H薄膜和太阳能电池的特性
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
F. Giorgis
中科院分区：
文献类型：
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作者：
R. Gharbi;M. Fathallah;C. Pirri;E. Tresso;G. Crovini;F. Giorgis
a-SiC:H 样品和太阳能电池是使用多室沉积系统通过等离子体增强化学气相沉积 (PECVD) 制造的。研究了光照对使用和不使用氢气稀释制备的样品的影响。用高氢稀释制备的样品的光传输特性随光照时间比未稀释的样品更稳定。样品作为本征层插入半透明太阳能电池中。太阳能电池的性能取决于能隙和本征层的厚度。高氢稀释可能会增加能隙并降低结构均匀性。结果表明，开路电压 Voc 随着光照射而降低，并且取决于掺杂的 p+ 层质量和本征层中产生的缺陷。 PACS 编号：70、72、40
a-SiC:H samples and solar cells were made by plasma-enhanced chemical vapor deposition (PECVD) using a multichamber deposition system. The effect of light illumination on samples prepared with and without hydrogen dilution was studied. The phototransport properties of the samples prepared with high hydrogen dilution were more stable versus time of illumination than non diluted ones.The samples were inserted as an intrinsic layer in semitransparent solar cells. The performance of solar cells depends on the energy gap and thickness of the intrinsic layer. High hydrogen dilution may increase the energy gap and act to decrease the structure uniformity. The results show that open circuit voltage Voc decreases with light illumination and depends on the doped p+ layer quality and created defects in the intrinsic layer. PACS Nos.: 70, 72, 40