Recording of cell action potentials with AlGaN∕GaN field-effect transistors
Recording of cell action potentials with AlGaN∕GaN field-effect transistors
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DOI：
10.1063/1.1853531
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发表时间：
2005-01
影响因子：
4
通讯作者：
G. Steinhoff;B. Baur;G. Wrobel;S. Ingebrandt;A. Offenhäusser;A. Dadgar;A. Krost;M. Stutzmann
中科院分区：
文献类型：
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作者：
G. Steinhoff;B. Baur;G. Wrobel;S. Ingebrandt;A. Offenhäusser;A. Dadgar;A. Krost;M. Stutzmann
一个AlGaN闪烁GaN电解质栅场效应晶体管阵列的检测电细胞信号已经实现。这些器件的低频噪声功率谱密度呈现1 scinf特性，无量纲Hooge参数为5×10−3。在工作条件下，等效栅极输入噪声的峰峰值为15μV，比用于细胞外记录的常见硅基器件小一个数量级。记录直接在非金属化栅表面上培养的大鼠心肌细胞汇合层的细胞外动作电位，信号幅度为75μV，信噪比为5：1。
An AlGaN∕GaN electrolyte gate field-effect transistor array for the detection of electrical cell signals has been realized. The low-frequency noise power spectral density of these devices exhibits a 1∕f characteristic with a dimensionless Hooge parameter of 5×10−3. The equivalent gate-input noise under operation conditions has a peak-to-peak amplitude of 15μV, one order of magnitude smaller than for common silicon-based devices used for extracellular recordings. Extracellular action potentials from a confluent layer of rat heart muscle cells cultivated directly on the nonmetallized gate surface were recorded with a signal amplitude of 75μV and a signal-to-noise ratio of 5:1.