Neutron-induced single event burnout in high voltage electronics

Neutron-induced single event burnout in high voltage electronics
复制标题

高压电子设备中的中子诱发单粒子烧毁

DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
S. Wender
S. Wender
中科院分区：
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文献类型：
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作者：
E. Normand;J. Wert;D. Oberg;P. Majewski;P. Voss;S. Wender

文献摘要

被引文献

相似文献

具有大气中子谱的高能中子在功率MOSFET中被证明会导致单粒子烧毁，当工作在低于额定电压50%的电压下时，在高压(&GT；3000 V)电子设备中会引起烧毁。实验室故障率与在欧洲测量的现场故障率有很好的相关性。
Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3000 V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.