THE EFFECTS OF DEPOSITION RATE ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF ZNO-AL FILMS DEPOSITED ON (1120) ORIENTED SAPPHIRE SUBSTRATES
THE EFFECTS OF DEPOSITION RATE ON THE STRUCTURAL AND ELECTRICAL-PROPERTIES OF ZNO-AL FILMS DEPOSITED ON (1120) ORIENTED SAPPHIRE SUBSTRATES
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DOI：
10.1063/1.349258
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发表时间：
1991-10-01
影响因子：
3.2
通讯作者：
SAITO, H
中科院分区：
文献类型：
--
作者：
IGASAKI, Y;SAITO, H
在加热到200 ℃的（1120 BAR）取向的蓝宝石衬底上，通过射频磁控溅射从与2 wt. %的Al 2 O3混合的ZnO靶以25至170 W的射频（rf）功率以0.7-27.4 nm min-1的沉积速率沉积铝掺杂的氧化锌（ZnO：Al）膜。%. 沉积的所有薄膜都是具有内应力的（0001）取向单晶薄膜。 随着沉积速率的增加，应力增加并且降低了外延膜的结晶性，因此膜的霍尔迁移率和电阻率分别降低和增加。 然而，获得的折射率在约1.4-3.0 × 10（-4）Ω cm的范围内，该值与目前用作透明电极的氧化铟锡膜的值相当。
Aluminum doped zinc oxide (ZnO:Al) films were deposited on (1120BAR) oriented sapphire substrates heated to 200-degrees-C with a radio-frequency (rf) power ranging from 25 to 170 W for a deposition rate in the range 0.7-27.4 nm min-1 by rf-magnetron sputtering from a ZnO target mixed with Al2O3 of 2 wt. %. All of the films deposited were (0001) oriented single-crystalline films with an internal stress. The stress was increased and degraded the crystallinity of the epitaxial film as a deposition rate was increased, and thus the Hall mobility and the resistivity of the film were, respectively, decreased and increased. However, the resistivities obtained were in the range about 1.4-3.0 x 10(-4) OMEGA cm, the values comparable to those for indium tin oxide film presently used as a transparent electrode.