Single-Event Burnout Hardening of Power UMOSFETs With Integrated Schottky Diode
Single-Event Burnout Hardening of Power UMOSFETs With Integrated Schottky Diode
复制标题
DOI：
10.1109/ted.2014.2312948
复制
发表时间：
2014-04
影响因子：
3.1
通讯作者：
Ying Wang;Chenghao Yu;Zhenguo Dou;Wei Xue
中科院分区：
文献类型：
--
作者：
Ying Wang;Chenghao Yu;Zhenguo Dou;Wei Xue
本文给出了带肖特基二极管的硬化功率U形栅MOSFET（UMOSFET）单粒子烧毁（SEB）的二维数值模拟结果。在该器件中，肖特基二极管被集成到功率UMOSFETs的每个单元电池中。我们发现，肖特基接触可以泄漏由离子的冲击所产生的空穴，并可以提高SEB的阈值电压。硬化结构是指在功率UMOSFET的基础上增加N缓冲层。因此，本文讨论的70 V硬化功率SD-UMOSFET包含肖特基二极管和N缓冲层，可以正常工作而不影响稳态特性。硬化后的SD-UMOSFET的反向恢复特性和SEB性能都得到了有效的提高。与标准UMOSFET相比，硬化后的SD-UMOSFET反向恢复时间缩短了49%，反向恢复电流峰值减小了56%，软度因子提高了100%以上。此外，SEB阈值电压增加到64 V，这是额定击穿电压的91%。
This paper presents 2-D numerical simulation results of single-event burnout (SEB) for hardened power U-shaped gate MOSFET (UMOSFET) with Schottky diode (SD-UMOSFET). In this device, a Schottky diode is integrated into every unit cell of power UMOSFETs. We find that the Schottky contact can leak off the generated holes caused by an ion's impact, and the SEB threshold voltage can be improved. The hardened structure means the addition of an N buffer layer based on a power UMOSFET here. So, the 70 V hardened power SD-UMOSFET discussed in this paper contains a Schottky diode and an N buffer layer, which can work normally without affecting steady-state characteristics. The reverse recovery characteristic and SEB performance of hardened SD-UMOSFET are both enhanced effectively. The reverse recovery time decreases 49%, the reverse recovery current peak decreases 56%, and the softness factor increases more than 100% when the hardened SD-UMOSFET is compared with the standard UMOSFET. In addition, the SEB threshold voltage increases to 64 V, which is 91% of the rated breakdown voltage.