CuInS2 based thin film solar cell with 10.2% efficiency
CuInS2 based thin film solar cell with 10.2% efficiency
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DOI：
10.1063/1.110786
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发表时间：
1993-12
影响因子：
4
通讯作者：
R. Scheer;T. Walter;H. Schock;M. Fearheiley;H. Lewerenz
中科院分区：
文献类型：
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作者：
R. Scheer;T. Walter;H. Schock;M. Fearheiley;H. Lewerenz
报道了CuInS 2薄膜的高效太阳能转换。通过热共蒸发制备富铜p型吸收体。铜铟比在1.0和1.8之间可以容忍，太阳能-电力转换损失很小（≤10%）。铜过量相（CuS）被化学去除。电池结构玻璃/Mo/p-CuInS 2/n-CdS/n+-ZnO/Al在模拟AM 1.5条件下提供10.2%。根据能带图讨论了器件的特性。
Efficient solar energy conversion with CuInS2 thin films is reported. The copper‐rich p‐type absorber is prepared by thermal coevaporation. A copper to indium ratio between 1.0 and 1.8 can be tolerated with small (≤10%) solar‐to‐electrical conversion losses. Copper excess phases (CuS) are removed chemically. The cell structure glass/Mo/p‐CuInS2/n‐CdS/n+‐ZnO/Al delivers 10.2% at simulated AM 1.5 conditions. The device properties are discussed based on its energy band diagram.