Total-ionizing-dose effects in modern CMOS technologies
Total-ionizing-dose effects in modern CMOS technologies
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DOI：
10.1109/tns.2006.885952
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发表时间：
2006-12-01
影响因子：
1.8
通讯作者：
Barnaby, H. J.
中科院分区：
文献类型：
--
作者：
Barnaby, H. J.
本文综述了深亚微米CMOS器件和先进半导体材料在电离辐射环境中的几个关键问题。正如ITRS路线图所概述的那样，商业行业在努力将摩尔定律追踪到45纳米节点及以上的过程中面临着许多挑战。虽然电离辐射暴露带来的许多经典威胁已经通过积极的半导体缩放而减少，但问题仍然是，在深亚微米区域是否存在未知的、潜在的更严重的威胁。这份手稿提供了一些材料，设备和设计的基本概述，正在探索或在某些情况下，今天使用。还概述了辐射威胁以及如何描述辐射效应。最后，本文详细讨论了我们现在所知道的现代设备和材料对辐射的反应。以及我们如何通过使用先进的分析和建模技术来评估未来技术的相对硬度。
This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead or commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation exposure have diminished by aggressive semiconductor scaling, the question remains whether there may be unknown, potentially worse threats lurking in the deep submicron regime. This manuscript provides a basic overview of some of the materials, devices, and designs that are being explored or, in some cases, used today. An overview of radiation threats and how radiation effects can be characterized is also presented. Last, the paper provides a detailed discussion of what we know now about how modern devices and materials respond to radiation. and how we may assess, through the use of advanced analysis and modeling techniques, the relative hardness of future technologies.