Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides
Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides
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DOI：
10.1002/adma.201601184
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发表时间：
2016-09-14
影响因子：
29.4
通讯作者：
Tongay, Sefaattin
中科院分区：
文献类型：
--
作者：
Cai, Hui;Soignard, Emmanuel;Tongay, Sefaattin
利用范德华(VDW)外延技术在极性Si(111)表面制备了原子薄的准2D GaS薄片。禁带宽度从620的普遍接受值连续调整到700 nm范围内，这是以前只有通过将Te合金化到GaS(GaSexTe1-x)中才能获得的。这是通过操纵各种VDW外延动力学因素来实现的，它允许在螺位错驱动和逐层生长之间进行更好的选择，以及设计具有不同材料-衬底相互作用(应变)能量的不同形貌。
Atomically thin quasi-2D GaSe flakes are synthesized via van der Waals (vdW) epitaxy on a polar Si (111) surface. The bandgap is continuously tuned from its commonly accepted value at 620 down to the 700 nm range, only attained previously by alloying Te into GaSe (GaSexTe1-x). This is accomplished by manipulating various vdW epitaxy kinetic factors, which allows the choice bet ween screw-dislocation-driven and layer-bylayer growth, and the design of different morphologies with different material-substrate interaction (strain) energies.