Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic Computing
Diffusive and Drift Halide Perovskite Memristive Barristors as Nociceptive and Synaptic Emulators for Neuromorphic Computing
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DOI：
10.1002/adma.202007851
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发表时间：
2021-03-16
影响因子：
29.4
通讯作者：
Mathews, Nripan
中科院分区：
文献类型：
--
作者：
John, Rohit Abraham;Yantara, Natalia;Mathews, Nripan
随着当前对神经形态计算硬件的研究推动力，实现有效的漂移和扩散忆阻器被认为是在深度学习和水库计算网络中实现读出层、选择器和框架的关键里程碑。目前的演示主要限于具有软击穿行为的氧化物绝缘体。虽然有机离子电子电化学材料提供了一种有吸引力的替代方案，但迄今为止，它们的实现仅限于利用离子漂移（即，漂移忆阻器技术。具有有机电化学材料的扩散忆阻器的开发仍处于早期阶段，并且其开关动力学的调制仍未被探索。在这里，卤化物钙钛矿（HP）忆阻势垒（可变肖特基势垒二极管）描绘可调扩散动力学和离子漂移的建议和实验证明。一个离子允许的聚（3，4-乙撑二氧噻吩）：聚苯乙烯磺酸界面，促进扩散动力学和离子源氧化镍（NiOx）界面，支持漂移动力学被确定为设计扩散和漂移忆阻器，分别与甲基铵溴化铅（CH 3 NH3 PbBr 3）作为开关矩阵。在最近的兴趣开发人工传入神经作为信息通道桥接传感器和人工神经网络，这些HP忆阻屏障被塑造为伤害性和突触神经形态感觉信号计算的仿真器。
With the current research impetus on neuromorphic computing hardware, realizing efficient drift and diffusive memristors are considered critical milestones for the implementation of readout layers, selectors, and frameworks in deep learning and reservoir computing networks. Current demonstrations are predominantly limited to oxide insulators with a soft breakdown behavior. While organic ionotronic electrochemical materials offer an attractive alternative, their implementations thus far have been limited to features exploiting ionic drift a.k.a. drift memristor technology. Development of diffusive memristors with organic electrochemical materials is still at an early stage, and modulation of their switching dynamics remains unexplored. Here, halide perovskite (HP) memristive barristors (diodes with variable Schottky barriers) portraying tunable diffusive dynamics and ionic drift are proposed and experimentally demonstrated. An ion permissive poly(3,4-ethylenedioxythiophene):polystyrene sulfonate interface that promotes diffusive kinetics and an ion source nickel oxide (NiOx) interface that supports drift kinetics are identified to design diffusive and drift memristors, respectively, with methylammonuim lead bromide (CH3NH3PbBr3) as the switching matrix. In line with the recent interest on developing artificial afferent nerves as information channels bridging sensors and artificial neural networks, these HP memristive barristors are fashioned as nociceptive and synaptic emulators for neuromorphic sensory signal computing.