Electron-impact core excitation of SF6. II. Generalized oscillator strengths in the S 2p region.
Electron-impact core excitation of SF6. II. Generalized oscillator strengths in the S 2p region.
复制标题
SF6 的电子撞击核心激励。
DOI：
10.1103/physreva.52.4678
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Hitchcock
中科院分区：
文献类型：
--
作者：
Turci;Francis;Tyliszczak;de Souza GG;Hitchcock
在动量转移范围（{italK}{sup 2}）为1- 20 a.u.内，导出了SF{sub 6}的离散和连续S2 {italp}激发的广义振子强度（GOS）. {sup{减}2}从非弹性电子散射的相对微分截面的角度变化。用于获得可靠的，绝对的GOS值的实验技术和数据处理程序的文件。GOS结果与最近的文献结果[J.F.英角，澳-地P. Mathers和K. T. Leung，Phys.Rev.A {bold 47}，R5（1993）]。注意到一些差异。发现这些问题很大程度上但不完全是由于所用数据分析程序的差异造成的。导出了SF{sub 6}在S2 {italp}激发区的Bethe面，说明了价电子的Compton散射的重要作用。
The generalized oscillator strengths (GOSs) for discrete and continuum S 2{ital p} excitations of SF{sub 6} have been derived in the momentum transfer range ({ital K}{sup 2}) of 1--20 a.u.{sup {minus}2} from the angular variation of the relative differential cross section for inelastic electron scattering. The experimental techniques and data processing procedures used to obtain reliable, absolute GOS values are documented. The GOS results are compared to recent literature results [J. F. Ying, C. P. Mathers, and K. T. Leung, Phys. Rev. A {bold 47}, R5 (1993)]. Some discrepancies are noted. These are found to arise largely, but not completely, from differences in the data analysis procedures used. The Bethe surface for SF{sub 6} in the region of S 2{ital p} excitation is derived and the important role of Compton scattering by valence electrons is illustrated.