Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy
Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy
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DOI：
10.1063/1.4867353
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发表时间：
2014-03-03
影响因子：
4
通讯作者：
Yamamoto, Hideki
中科院分区：
文献类型：
--
作者：
Hirama, Kazuyuki;Taniyasu, Yoshitaka;Yamamoto, Hideki
我们研究了通过离子束辅助分子束外延 (MBE) 在金刚石 (001) 和 (111) 基板上形成立方氮化硼 (c-BN) 薄膜。由于竞争相形成和选择性蚀刻之间的相互作用，亚稳态c-BN（sp(3)键合BN）相可以外延生长。我们表明，适当调整 N-2(+) 和 Ar+ 离子的加速电压是选择性区分非 sp(3) BN 相的关键。在低加速电压值下，主要形成sp(2)键合的BN，而在高加速电压下，无论BN的键合特性如何，蚀刻都占主导地位。 (C) 2014 AIP 出版有限责任公司。
We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp(3)-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N-2(+) and Ar+ ions is a key to selectively discriminate non-sp(3) BN phases. At low acceleration voltage values, the sp(2)-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN. (C) 2014 AIP Publishing LLC.