One-step growth of amorphous/crystalline Ga2O3 phase-junctions for high performance solar-blind photodetection.
One-step growth of amorphous/crystalline Ga2O3 phase-junctions for high performance solar-blind photodetection.
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DOI：
10.1021/acsami.9b17409
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发表时间：
2019-11
影响因子：
9.5
通讯作者：
Yuehui Wang;W. Cui;Jie Yu;Y. Zhi;Haoran Li;Zhiyi Hu;X. Sang;E. Guo;Weihua Tang;
中科院分区：
文献类型：
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作者：
Yuehui Wang;W. Cui;Jie Yu;Y. Zhi;Haoran Li;Zhiyi Hu;X. Sang;E. Guo;Weihua Tang;
从安全通信、监测、传感等方面的科学应用和实际应用都推动了对高性能日盲光探测器的追求。尤其是，基于宽禁带半导体的异质结的制备已经成为促进高效光生电子/空穴对分离的一种有吸引力的策略。然而，精确控制异质结的生长仍然是一个巨大的挑战。晶格失配导致在界面处形成缺陷和/或位错，恶化了器件的性能并限制了其预期的应用。在这里，我们用溅射技术简单地一步生长了非晶态/晶态Ga2O_3相结，获得了0.81A/W的高响应率，高于107的光暗电流比，以及~12 ns的超高响应速度。与已报道的日盲光探测器相比，探测器的探测率~5.67×1014琼斯提高了两个数量级。这种良好的光响应特性可以通过界面内置场促进非晶态/晶态Ga2O_3相结的电子-空穴对分离来理解。我们的结果为实现高性能光电子学在日盲光谱中的功能提供了一条新的途径。
The pursuit of high-performance photodetectors functioning in the solar-blind spectrum is motivated by both scientific and practical applications ranging from securely communication, monitoring, sensing, etc. In particular, the fabrication of heterojunctions based on the wide bandgap semiconductors have emerged as an attractive strategy to promote the high-efficient photogenerated electron/hole pairs separation. However, the precisely controlled growth of heterojunctions remains a huge challenge. The lattice mismatch leads to the formation of defects and/or dislocations at the interface, deteriorating the performance of devices and limiting their envisioned applications. Here, we demonstrate a simple one-step growth of amorphous/crystalline Ga2O3 phase-junctions by using sputtering technique, yielding a large responsivity of 0.81 A/W, a superior photo-to-dark current ratio over 107, and an ultrahigh response speed of ~ 12 ns. Compared to the previous reported solar-blind photodetectors, the obtained detectivity ~ 5.67×1014 Jones is increased by two orders of magnitude. Such excellent photoresponse characteristics can be understood by the interfacial built-in field promoted electron-hole pairs separation for the amorphous/crystalline Ga2O3 phase-junctions. Our results provide a novel path towards realizing high-performance optoelectronics functioning in the solar-blind spectrum.